technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com dual ultrafast power rectifier qualified per mil-prf-19500/645 t4-lds-0018 rev. 1 (072044) page 1 of 1 devices levels 1N6772 1N6772r jan 1n6773 1n6773r jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) (per diode) parameters / test conditions symbol value unit peak repetitive reverse voltage i d = 5adc 1N6772, r 1n6773, r v rwm 400 600 vdc average forward current (1) t c = +100c i f 8 adc peak surge forward current i fsm 60 a(pk) thermal resistance - junction to case r jc 2.5 c/w note: (1) derate linearly @ 160ma/c above t c = 100c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit breakdown voltage (2) 1N6772, r 1n6773, r v br 400 600 vdc forward voltage i f = 4adc (2) i f = 8adc (2) v f1 v f2 1.45 1.60 vdc reverse leakage current v r = 320v (2) v r = 480v (2) 1N6772, r 1n6773, r i r1 10 adc reverse leakage current v r = 320v (2) , t c = +100c v r = 480v (2) , t c = +100c 1N6772, r 1n6773, r i r2 500 adc reverse recovery time i f = 1a, di/dt = 50a/s t rr 60 ns junction capacitance v r = 5vdc, f = 1.0mhz c j 200 pf note: (2) pulse test; 300s, duty cycle 2% to-257 ? 1 ? 2 ? 3 ? 1 ? 2 ? 3
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